Collect. Czech. Chem. Commun. 1987, 52, 1131-1159

A dual site growth model of gallium arsenide epitaxial layers from the gas phase

Emerich Erdösa, Jindřich Leitnerb, Petr Voňkab, Josef Stejskalc and Přemysl Klímac

a The J. Heyrovský Institute of Physical Chemistry and Electrochemistry, Czechoslovak Academy of Sciences, 121 38 Prague 2
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
c Tesla – Popov Research Institute of Radiocommunication, 142 21 Prague 4


For a quantitative description of the epitaxial growth rate of gallium arsenide, a model is proposed including two rate controlling steps. One of these steps is the diffusion of gaseous components between the gas phase and the epitaxial layer surface, and the other step is of chemical nature, i.e. either the surface reaction or adsorption or desorption of one of the gaseous components. In the model considered, an active dual site is involved in the second rate controlling step, and twelve mechanisms are proposed for which the pertinent rate equations are derived. The individual mechanisms differ one from the other not only by the kind of the rate controlling step but also by the occupation of the dual site, viz. in the both direct and reversed direction. The proposed model is confronted with the dependences of the growth rate on partial pressures of components in the feed found by experiment. The results are discussed with regard to the possibility of individual mechanisms and of the model as a whole, and also with respect to their applicability and to the direction of further investigations.