Collect. Czech. Chem. Commun. 1989, 54, 2933-2950

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

Emerich Erdösa, Petr Voňkab, Josef Stejskalc and Přemysl Klímac

a The Heyrovský Institute of Physical Chemistry and Electrochemistry, Czechoslovak Academy of Sciences, 182 23 Prague 8
b Department of Physical Chemistry, Prague Institute of Chemical Technology, 166 28 Prague 6
c Tesla-Popov Research Institute of Radiocummunication, 142 21 Prague 4


This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.