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Collect. Czech. Chem. Commun. 1984, 49, 666-672
https://doi.org/10.1135/cccc19840666

Calculation of bulk and surface electronic properties of diamond-like semiconductors

G. V. Gadiyaka, A.A. Karpushinb, Yu. N. Morokova and Mojmír Tomášekc

a Institute of Theoretical and Applied Mechanics, Siberian Section, Academy of Sciences of USSR, 630090 Novosibirsk 90
b Research Department, Novosibirsk State University, 630090 Novosibirsk 90
c J. Heyrovský Institute of Physical Chemistry and Electrochemistry, Czechoslovak Academy of Sciences, 121 38 Prague 2, ČSSR

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  • Gadiyak G. V., Karpushin A. A., Korolenko I. V., Morokov Yu. N., Sazonov S. G., Tomášek M.: Local density of states of GaAs and InAs surfaces: Ideal (111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface. Czech J Phys 1987, 37, 862. <https://doi.org/10.1007/BF01604257>
  • Gadiyak G. V., Karpushin A. A., Korolenko I. V., Morokov Yu. N., Yu. Semenova I., Sorokin A. N., Tomášek M.: Calculation of the Electronic Structure! of Disordered Hydrogen Adsorption on the Si(111) Surface. Physica Status Solidi (b) 1986, 137, 633. <https://doi.org/10.1002/pssb.2221370225>
  • Gadijak G. V., Karpushin A. A., Korolenko I. V., Morokov Ju. N., Tomášek M.: Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface. Czech J Phys 1985, 35, 54. <https://doi.org/10.1007/BF01590275>
  • Gadijak G. V., Karpushin A. A., Korolenko I. V., Morokov Yu. N., Sorokin A. N., Tomášek M.: Adsorption of hydrogen on the Si (111) surface. Comparison of the recursion method with the generalized method of Bethe lattices. Czech J Phys 1984, 34, 1339. <https://doi.org/10.1007/BF01590419>